tsm4944d 30v dual n-channel mosfet 1/4 version: a13 sop - 8 features advance trench process technology high density cell design for ultra low on-resistan ce application load switch dc-dc conversion ordering information part no. package packing tsm4944dcs rlg sop-8 2.5kpcs / 13 reel note: g denote for halogen free product absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current i d 12.2 a pulsed drain current i dm 30 a continuous source current (diode conduction) (note) i s 1.9 a maximum power dissipation t a = 25 o c p d 2.3 w t a = 75 o c 1.2 operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg -55 to +150 o c thermal performance parameter symbol limit unit junction to case thermal resistance r ? jc 1.8 o c/w junction to ambient thermal resistance (pcb mounted ) r ? ja 40 o c/w notes 1: maximum dc current limited by the package notes 2: surface mounted on 1 x 1 fr4 board, t 10 sec. product summary v ds (v) r ds(on) (m ? ) i d (a) 30 13.2 @ v gs = 10v 12.2 25 @ v gs = 4.5v 9.4 block diagram dual n-channel mosfet pin definition : 1. source 1 8. drain 1 2. gate 1 7. drain 1 3. source 2 6. drain 2 4. gate 2 5. drain 2
tsm4944d 30v dual n-channel mosfet 2/4 version: a13 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 30 -- -- v gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 1.0 1.8 3.0 v gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = 30v, v gs = 0v i dss -- -- 1.0 ua on-state drain current v ds 5v, v gs = 10v i d(on) 30 -- -- a drain-source on-state resistance v gs = 10v, i d = 12.2a r ds(on) -- 11 13.2 m ? v gs = 4.5v, i d = 9.4a -- 19 25 forward transconductance v ds = 15v, i d = 15a g fs -- 32 -- s diode forward voltage i s = 1.9a, v gs = 0v v sd -- 0.85 1.3 v dynamic b total gate charge v ds = 15v, i d = 12.2a, v gs = 10v q g -- 26 -- nc gate-source charge q gs -- 6 -- gate-drain charge q gd -- 5 -- input capacitance v ds = 15v, v gs = 0v, f = 1.0mhz c iss -- 2134 -- pf output capacitance c oss -- 343 -- reverse transfer capacitance c rss -- 134 -- switching c turn-on delay time v dd = 15v, r l = 15 ? , i d = 1a, v gen = 10v, r g = 6 ? t d(on) -- 17 -- ns turn-on rise time t r -- 3.5 -- turn-off delay time t d(off) -- 40 -- turn-off fall time t f -- 6 -- notes: a. pulse test: pw 300s, duty cycle 2% b. for design aid only, not subject to production t esting. b. switching time is essentially independent of ope rating temperature.
tsm4944d 30v dual n-channel mosfet 3/4 version: a13 sop-8 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
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